Continuous-Wave Red/Green/Blue Laser Annealing for the Activation of Phosphorus/Boron-Doped Si Deep Junction with High Scan Speed

We demonstrate continuous-wave (CW) red/green/blue (RGB) laser scanning annealing (LSA) for activating phosphorus (P)-and boron (B) -implanted silicon (Si) deep junctions at high wafer-level throughput.single platform provides RGB wavelengths with programmable power (20/30/40 %) and speed, enabling spectral-temporal control of the thermal budget.Depth-profile X-ray photoelectron spectroscopy at 20 nm sputter steps was quantitatively fitted (Shirley background: constrained spin-orbit doublets) to extract P-Si vs P-Ox and Si oxidation states (Si 0 -Si 4+ ).The results establish a wavelength-depth selectivity map: blue most effectively reduces surface oxides (0 -40 nm), green maximizes P-Si fraction near the implant peak ( 80 -100 nm), and red sustains P-Si into deeper regions, consistent with stronger bulk heating/drive-in.Electrical current-voltage measurements show that optimized CW-LSA conditions yield lower ideality factor and higher forward current than the as-implanted state and are competitive with rapid thermal anneal references (e.g., -10.3 % in for P at 45 %), with the optimum depending on dopant species (e.g., mid-power for B, slightly higher for P) and dwell time.Cross-sectional transmission electron microscope confirms progressive removal of end-of-range defects with increasing power.Together, the data demonstrate that multi-wavelength CW-LSA enables block-selective annealing and deep-junction activation while suppressing lateral diffusion, offering a practical process window for advanced monolithic/heterogeneous integration.