Hybrid superconducting-ferroelectric quantum memristor

The nontrivial integration of qubits with classical computing systems and the lack of quantum-memory devices remain a key obstacle in the development of quantum technologies. Here, we present a theoretical platform for hybrid quantum devices with memory characteristics. In these current-driven hybrid memristors, a ferroelectric layer serves as the tunneling barrier in a superconducting Josephson junction; thus, the potential barrier is history-dependent. A memory-integrated phase qubit and a Lagrangian description of the superconducting circuit are also presented, paving the way to highly functional, self-modulated Josephson-junction technologies.