SiC MOSFET gate oxide degradation monitoring: a gate leakage current approach
Authors
- Anne‐Sophie Descamps
- Christophe Batard (ORCID: https://orcid.org/0000-0002-8223-4622)
- Thanh-Long Le (ORCID: https://orcid.org/0000-0001-5238-4171)
- Antoine Laspeyres
- Nicolas Ginot (ORCID: https://orcid.org/0000-0002-0633-0508)
- Louison Gouy
Institutions
- Institut d'Électronique et des Technologies du numéRique (FR)
- Intelligent Systems Research (United States) (US)
- Safran (France) (FR)
Publication Details
- Journal
- International Journal of Electronics
- Published
- 2026-03-04
- DOI
- https://doi.org/10.1080/00207217.2026.2637979
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00