Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation (Adv. Electron. Mater. 20/2025)

Ferroelectric Memcapacitors In their Research Article (10.1002/aelm.202500421), Woo Young Choi and co-workers propose and demonstrate a novel capacitive time-domain (TD) content-addressable memory (CAM) based on a single ambipolar ferroelectric memcapacitor (1C) exhibiting band-reject-filter-shaped capacitance-voltage characteristics. The proposed 1C TD CAM performs linear Hamming distance computation through propagation delay modulation, enabling high-density associative memory and highly reliable in-memory nearest-neighbor search for one-shot learning.