Λ-type negative differential resistance effect in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mi>Ru</mml:mi> <mml:msub> <mml:mi mathvariant="normal">O</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:mrow> </mml:math> impla

Our study aims to provide a theoretical paradigm for a \ensuremath{\Lambda}-type negative differential resistance (NDR) device and to discover the general properties and mechanisms. In this study, we construct a NDR device named a metal-insulator interface reflecting electronic grid, which is made from rutile-$\mathrm{Ru}{\mathrm{O}}_{2}$ and $\mathrm{Ti}{\mathrm{O}}_{2}$, and the central region including an extension region with $\mathrm{Ru}{\mathrm{O}}_{2}\text{\ensuremath{-}}\mathrm{Ti}{\mathrm{O}}_{2}$ and a scattering region with pure $\mathrm{Ru}{\mathrm{O}}_{2}$. The device exhibits a \ensuremath{\Lambda}-type NDR phenomenon, which is robust in different crystallographic geometries for both nonmagnetic and altermagnetic ordering for $\mathrm{Ru}{\mathrm{O}}_{2}$. The NDR phenomenon also shows anisotropy for different magnetic states for $\mathrm{Ru}{\mathrm{O}}_{2}$, which can be used to distinguish the magnetic ground state of $\mathrm{Ru}{\mathrm{O}}_{2}$. To explain the \ensuremath{\Lambda}-type NDR phenomenon, we propose a general transmission channel selection mechanism in the interface of $\mathrm{Ru}{\mathrm{O}}_{2}$ and $\mathrm{Ti}{\mathrm{O}}_{2}$, which can be described by Bragg's law, and we believe that this mechanism is the main source of \ensuremath{\Lambda}-type NDR. This effect occurs at the interface, so it has the opportunity to exist in other devices with similar configurations. Our designed NDR device has a broad application in high-frequency oscillators and memory devices.