Numerical Performance Analysis of BaZrS <sub>3</sub> -Based MSM Vertical Photodetector

This study presents a comprehensive numerical modeling and performance evaluation of a BaZrS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>, perovskite-based, metal-semiconductor-metal (MSM) photodetector using SCAPS-1D, demonstrating its strong potential for high-efficiency photosensing applications. By systematically optimizing the absorber layer's thickness and doping concentration, notable enhancements in responsivity and detectivity were achieved. Under 600 nm irradiation, the photodetector exhibits an impressive responsivity of 0.41 A/W and a high detectivity of 9.87 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> Jones. These findings establish BaZrS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> photo detectors as a promising, cost-effective, and environmentally friendly alternative for next-generation optoelectronic and sensing technologies.

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Publication Details

Published
2025-10-13
DOI
https://doi.org/10.1109/miel66332.2025.11261213
Primary Topic
2D Materials and Applications
Type
article
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article

Numerical Performance Analysis of BaZrS 3 -Based MSM Vertical Photodetector

Mohamed Moustafa, Ziad Abu Waar, Stavros Christopoulos, S. Yasin
2D Materials and Applications
article

Numerical Performance Analysis of BaZrS 3 -Based MSM Vertical Photodetector

Mohamed Moustafa, Ziad Abu Waar, Stavros Christopoulos, S. Yasin
article en

Abstract

This study presents a comprehensive numerical modeling and performance evaluation of a BaZrS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>, perovskite-based, metal-semiconductor-metal (MSM) photodetector using SCAPS-1D, demonstrating its strong potential for high-efficiency photosensing applications. By systematically optimizing the absorber layer's thickness and doping concentration, notable enhancements in responsivity and detectivity were achieved. Under 600 nm irradiation, the photodetector exhibits an impressive responsivity of 0.41 A/W and a high detectivity of 9.87 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> Jones. These findings establish BaZrS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> photo detectors as a promising, cost-effective, and environmentally friendly alternative for next-generation optoelectronic and sensing technologies.

University of Jordan (JO), Sorbonne University Abu Dhabi (AE), American University in Cairo (EG)
Openalex Percentile: Top 69%
2D Materials and Applications
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