Dynamic-Depleted Transistor Empowering Logic-in-Coding Computing
Reconfigurable transistors are crucial for the development of high-computing-power and highly flexible logic circuits. However, conventional reconfigurable transistors, which operate in either partially depleted or fully depleted states, are limited to basic logic functions. This often requires additional circuits to switch functions, resulting in circuit redundancy and high-power consumption. Here, we propose a dynamic-depletion transistor architecture that realizes the five reconfigurable logic functions through electrostatic modulation of carrier depletion profiles. By precisely regulating the electrostatic potential of the control gate, the spatial distribution of charge carriers within the two-dimensional (2D) channel can be precisely tailored. This modulation effectively screens the electrostatic fields of other gates, thereby enabling transitions between fully depleted and partially depleted states within the same device. The dynamic switching behavior of the depletion state in the 2D WSe<sub>2</sub> transistor enables up to five functional integrations. Furthermore, these circuits can represent standard digital functions through inverse and additive reconfigurable logic operations, utilizing only 40 and 25% of the transistor count compared with complementary metal oxide semiconductor circuits. Building on this architecture, the designed circuit can be extended to implement a suite of reconfigurable digital image processing tasks, demonstrating a proof-of-concept for designing low-integration yet high-computing-power RLCs.
Authors
- Lin Gu (ORCID: https://orcid.org/0000-0002-7504-031X)
- Mengyu Hong (ORCID: https://orcid.org/0000-0002-1932-5871)
- Xiankun Zhang (ORCID: https://orcid.org/0000-0001-9654-4659)
- Huihui Yu (ORCID: https://orcid.org/0009-0009-7417-9385)
- Qinghua Zhang (ORCID: https://orcid.org/0000-0003-1350-6388)
- Yue Zhang (ORCID: https://orcid.org/0000-0002-8213-1420)
- Zheng Zhang (ORCID: https://orcid.org/0000-0002-9104-7562)
- Gao Li (ORCID: https://orcid.org/0000-0001-6649-5796)
- Hang Zhao (ORCID: https://orcid.org/0000-0001-6336-5208)
- Xiaofu Wei
- Wenhui Tang
- Zhihong Cao
Institutions
- Chinese Academy of Sciences (CN)
- Beijing University of Technology (CN)
- FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ)
- Advanced Technology & Materials (China) (CN)
- Collaborative Innovation Center of Quantum Matter (CN)
- Advanced Materials and Devices (United States) (US)
- Advanced Materials and Technologies (Slovenia) (SI)
- Institute of Physics (CN)
- National Laboratory for Superconductivity (CN)
- University of Science and Technology Beijing (CN)
Publication Details
- Journal
- ACS Nano
- Published
- 2025-12-02
- DOI
- https://doi.org/10.1021/acsnano.5c17139
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00