Identification of electrically active defects in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mn>6</mml:mn> <mml:mi>H</mml:mi> <mml:mtext>-SiC</mml:mtext> </mml:mrow> </mml:math>

Deep level defects in silicon carbide (SiC) are of great importance for developing both power electronics and quantum technology applications based on SiC material. While the more technologically mature $4H$ polytype has been widely explored, electrical identification of deep level defect states in $6H$-SiC has not been completed. This work aims to identify irradiation-induced charge state transition levels arising from intrinsic defects in $6H$-SiC using deep level transient spectroscopy (DLTS) and the formation energy diagram formalism based on density functional theory (DFT) calculations. By comparing experimental results of $6H$-SiC epitaxial layers with measurements of $4H$-SiC material that has been grown under identical conditions, combined with DFT calculations, we assign possible origins for the observed DLTS-signatures.