Epitaxial Cr2MnO4 p–n heterojunction to (2¯01) β-Ga2O3 deposited via off-axis magnetron sputtering
We report the heteroepitaxial growth of spinel Cr2MnO4 thin films on (2¯01) β-Ga2O3 substrates via off-axis RF magnetron sputtering. Structural analysis confirms (111)-oriented epitaxial films with optimized growth at 950 °C. Fabricated Cr2MnO4/β-Ga2O3 vertical diodes exhibit rectifying behavior with high on/off ratios (∼108), turn-on voltages near 0.85 V, and low reverse leakage current. Transmission electron microscopy and atomic force microscopy analyses show the films exhibit a Stranski–Krastanov growth mode, with three-dimensional texturing of potential interest for device performance. Capacitance–voltage measurements reveal intrinsic p-type conductivity with carrier concentration ∼7 × 1017 cm−3. The results suggest that Cr2MnO4 may be a promising candidate for Ga2O3-based bipolar devices.
Authors
- Karl D. Hobart (ORCID: https://orcid.org/0000-0002-3840-8357)
- Marko J. Tadjer (ORCID: https://orcid.org/0000-0002-2388-2937)
- James C. Gallagher (ORCID: https://orcid.org/0000-0001-8906-8543)
- Gaurab Rimal (ORCID: https://orcid.org/0000-0002-7991-7772)
- Kashmira Dey (ORCID: https://orcid.org/0009-0007-9980-5616)
- Babajide Akintunde (ORCID: https://orcid.org/0000-0003-1379-5319)
- Adam J. Hauser (ORCID: https://orcid.org/0000-0003-1752-0937)
- Michael A. Mastro (ORCID: https://orcid.org/0000-0002-6372-5506)
- Daniel J. Pennachio (ORCID: https://orcid.org/0000-0002-0797-5076)
- Katie R. Gann (ORCID: https://orcid.org/0000-0001-7964-8288)
- Audrey Rose Gutierrez (ORCID: https://orcid.org/0000-0001-6671-7109)
- A. Kayani (ORCID: https://orcid.org/0000-0003-2513-9618)
- Naomi Derksen (ORCID: https://orcid.org/0009-0004-5204-2111)
- Xin Wang (ORCID: https://orcid.org/0000-0002-8537-3417)
- Michael G. Hall (ORCID: https://orcid.org/0009-0009-3819-3745)
- Ashik Imran (ORCID: https://orcid.org/0000-0001-8744-3696)
- Jared T. Orent (ORCID: https://orcid.org/0009-0005-9844-7197)
Institutions
- United States Naval Research Laboratory (US)
- Western Michigan University (US)
- University of Alabama (US)
- National Research Council (RO)
- National Health Council (US)
Publication Details
- Journal
- Journal of Applied Physics
- Published
- 2025-12-02
- DOI
- https://doi.org/10.1063/5.0299530
- Citations
- 1
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.43