First-principles investigation on pressure-induced phase transitions and electronic properties in GeTe

GeTe is a crucial phase change material, and its phase transition under pressure remains incompletely understood. In this work, we employed the density functional theory calculations to establish the variations in GeTe induced by pressure. Three phases are identified from the bandgap, the enthalpy-pressure (H−P) profile, and the unit cell volume: the low-pressure rhombohedral phase (R3m), the intermediate-pressure cubic phase (Fm3¯m), and the high-pressure orthorhombic phase (Pnma). The R3m to Fm3¯m phase occurs at 4 GPa, and that from the Fm3¯m to Pnma phase occurs at 15 GPa. Analyzing electron localization functions and Born effective charges between Ge and Te atoms jointly revealed the bonding characteristics: The R3m and Fm3¯m phases are dominated by covalent bonds, and the Pnma phase is contributed by ionic bonds. This provides a theoretical basis at the electronic and bonding levels, supporting the device applications of GeTe in high-pressure environments.

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Journal
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Published
2025-12-01
DOI
https://doi.org/10.1116/6.0004863
Primary Topic
Phase-change materials and chalcogenides
Type
article
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article

First-principles investigation on pressure-induced phase transitions and electronic properties in GeTe

Kai Jiang, Z. Zhang, Liyuan Chen, Lin Wang et al.
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Phase-change materials and chalcogenides
article

First-principles investigation on pressure-induced phase transitions and electronic properties in GeTe

Kai Jiang, Z. Zhang, Liyuan Chen, Lin Wang, Su Chen
article en

Abstract

GeTe is a crucial phase change material, and its phase transition under pressure remains incompletely understood. In this work, we employed the density functional theory calculations to establish the variations in GeTe induced by pressure. Three phases are identified from the bandgap, the enthalpy-pressure (H−P) profile, and the unit cell volume: the low-pressure rhombohedral phase (R3m), the intermediate-pressure cubic phase (Fm3¯m), and the high-pressure orthorhombic phase (Pnma). The R3m to Fm3¯m phase occurs at 4 GPa, and that from the Fm3¯m to Pnma phase occurs at 15 GPa. Analyzing electron localization functions and Born effective charges between Ge and Te atoms jointly revealed the bonding characteristics: The R3m and Fm3¯m phases are dominated by covalent bonds, and the Pnma phase is contributed by ionic bonds. This provides a theoretical basis at the electronic and bonding levels, supporting the device applications of GeTe in high-pressure environments.

Journal of Vacuum Science & Technology A Vacuum Surfaces and FilmsVol. 43(6)
Ningbo University of Technology (CN), Shanghai Dianji University (CN), East China Normal University (CN)
Openalex Percentile: Top 69%
Phase-change materials and chalcogenides
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