Comparative Study of Voltage Amplification in Cylindrical FE-FE-DE and FE-DE Heterostructures

This work examines a cylindrical FE-DE heterostructure and compares its performance with that of a cylindrical FE-FE-DE heterostructure. It aims to maximize voltage amplification, increase capacitance, and attain a constant negative capacitance. First, the existence of negative capacitance is shown by analyzing isolated cylindrical ferroelectric capacitors. A cylindrical dielectric capacitor and a cylindrical ferroelectric capacitor are integrated in series to stabilize negative capacitance. Our results indicate that the capacitance of the FE-FE-DE stack, consisting of Si:HfO2 and Zr:HfO2, closely aligns with the dielectric capacitance. Consequently, enhanced performance is anticipated in comparison with the FE-DE arrangement. Additionally, the dynamic response of two distinct configurations was analyzed, yielding a comprehensive understanding of these heterostructures’ behavior.

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Publication Details

Journal
Electronic Materials
Published
2025-12-01
DOI
https://doi.org/10.3390/electronicmat6040021
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
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article

Comparative Study of Voltage Amplification in Cylindrical FE-FE-DE and FE-DE Heterostructures

Pramod Martha, Bhaskar Awadhiya, P. Suresh, Yashwanth Nanjappa et al.
Electronic Materials
Ferroelectric and Negative Capacitance Devices
article

Comparative Study of Voltage Amplification in Cylindrical FE-FE-DE and FE-DE Heterostructures

Pramod Martha, Bhaskar Awadhiya, P. Suresh, Yashwanth Nanjappa, Vikash Mishra, Sampath Kumar
article en

Abstract

This work examines a cylindrical FE-DE heterostructure and compares its performance with that of a cylindrical FE-FE-DE heterostructure. It aims to maximize voltage amplification, increase capacitance, and attain a constant negative capacitance. First, the existence of negative capacitance is shown by analyzing isolated cylindrical ferroelectric capacitors. A cylindrical dielectric capacitor and a cylindrical ferroelectric capacitor are integrated in series to stabilize negative capacitance. Our results indicate that the capacitance of the FE-FE-DE stack, consisting of Si:HfO2 and Zr:HfO2, closely aligns with the dielectric capacitance. Consequently, enhanced performance is anticipated in comparison with the FE-DE arrangement. Additionally, the dynamic response of two distinct configurations was analyzed, yielding a comprehensive understanding of these heterostructures’ behavior.

Electronic MaterialsVol. 6(4)
Manipal Academy of Higher Education (IN)
Openalex Percentile: Top 62%
Ferroelectric and Negative Capacitance Devices
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