Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum. Central to this capability are IR photodetectors (PDs) based on 2D materials (2DMs), which offer tunable spectral responsivity and wavelength‐resolved multiparameter optical information. This review examines the fundamental mechanisms and design strategies that enable spectral tunability at the frontier of 2DM‐based IR PDs, elucidating how they offer unique opportunities to tailor spectral responses across a broad wavelength range through symmetry‐breaking induced by geometric (geometrically tunable spectral engineering) and electric‐field (electrically tunable spectral engineering) effects. These approaches collectively enable simultaneous optimization of spectral tunability and sensitivity without compromising wavelength coverage, speed, power efficiency, or scalability, while also providing polarization sensitivity, multiband detection, and self‐powered operation for edge‐integrated AI platforms, including computational spectroscopy, artificial vision, computing, and communications. This review outlines the key processes and integration requirements for scalable manufacturing, which are essential for establishing spectrally tunable 2DM‐based IR PDs as core building blocks of intelligent optoelectronics. Ultimately, the development of spectrally tunable 2DM‐based IR PDs will transform intelligent optoelectronic platforms for or with AI.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-12-02
DOI
https://doi.org/10.1002/adfm.202519542
Citations
1
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.52
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Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

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article

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Suvi‐Tuuli Akkanen, Yunyun Dai, Zhipei Sun, Jeongmin Ha, Hyeon‐Jin Shin, Faisal Ahmed, Hoon Hahn Yoon, Yingshan Ma, Sang Hoon Chae, Young Min Song, Hanvit Kim, Hyunsook Jung, Sung Jin An, Jung‐Wook Min, Tawfique Hasan, Weiwei Cai, Dong‐Ho Kang, Je-Hyun Yoo, Yulong An
article en
1 citations

Abstract

Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum. Central to this capability are IR photodetectors (PDs) based on 2D materials (2DMs), which offer tunable spectral responsivity and wavelength‐resolved multiparameter optical information. This review examines the fundamental mechanisms and design strategies that enable spectral tunability at the frontier of 2DM‐based IR PDs, elucidating how they offer unique opportunities to tailor spectral responses across a broad wavelength range through symmetry‐breaking induced by geometric (geometrically tunable spectral engineering) and electric‐field (electrically tunable spectral engineering) effects. These approaches collectively enable simultaneous optimization of spectral tunability and sensitivity without compromising wavelength coverage, speed, power efficiency, or scalability, while also providing polarization sensitivity, multiband detection, and self‐powered operation for edge‐integrated AI platforms, including computational spectroscopy, artificial vision, computing, and communications. This review outlines the key processes and integration requirements for scalable manufacturing, which are essential for establishing spectrally tunable 2DM‐based IR PDs as core building blocks of intelligent optoelectronics. Ultimately, the development of spectrally tunable 2DM‐based IR PDs will transform intelligent optoelectronic platforms for or with AI.

Advanced Functional Materials
Beijing Institute of Technology (CN), Electronics and Telecommunications Research Institute (KR), Korea Advanced Institute of Science and Technology (KR), Nanyang Technological University (SG), Shanghai Jiao Tong University (CN), University of Cambridge (GB), Gwangju Institute of Science and Technology (KR), VTT Technical Research Centre of Finland (FI), Aalto University (FI)
Openalex Percentile: Top 30%
2D Materials and Applications
0.52
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