High Energy Accelerator Research Organization (JP)
Institut Pprime (FR)
Laboratoire de Génie Électrique et Électronique de Paris (FR)
Centre de Nanosciences et de Nanotechnologies (FR)
CentraleSupélec (FR)
Laboratoire de Physique des Interfaces et des Couches Minces (FR)
Institut Photovoltaïque d’Île-de-France (FR)
Imperial College London (GB)
Publication Details
Journal
SPIRE - Sciences Po Institutional REpository
Published
2025-11-09
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
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article
Time Resolved Emission Spectroscopy of Si-doped MBE grown GaAsPBi
Chalermchai Himwas, Karim Ouaras, Mohamed Boutchich, Charles Renard et al.
Journal
SPIRE - Sciences Po Institutional REpository
Topics
Semiconductor Quantum Structures and Devices
article
Time Resolved Emission Spectroscopy of Si-doped MBE grown GaAsPBi
Chalermchai Himwas, Karim Ouaras, Mohamed Boutchich, Charles Renard, Songphol Kanjanachuchai, David Alamarguy, Keiki Fukumoto, José Alvarez, Denis Mencaraglia, J.P. Connolly, Alexandre Jaffré
article en
Abstract
No abstract available for this paper.
Publication Tag
SPIRE - Sciences Po Institutional REpository
Institutions
High Energy Accelerator Research Organization (JP), Institut Pprime (FR), Laboratoire de Génie Électrique et Électronique de Paris (FR), Centre de Nanosciences et de Nanotechnologies (FR), CentraleSupélec (FR), Laboratoire de Physique des Interfaces et des Couches Minces (FR), Institut Photovoltaïque d’Île-de-France (FR), Imperial College London (GB)