Enhanced Efficiency and Reliability of AlGaN UVC-LED with Tapered Hole Injection Layer
In this work, the electrical and optical performance of AlGaN-based ultraviolet-C light-emitting diodes (UVC-LEDs) with a tapered Al-content hole injection layer was investigated both theoretically and experimentally. A total of 1000 h of real-time electrical stress was conducted to study the degradation process of such devices. UVC-LED incorporating a hole injection layer with a larger gradient was found to significantly suppress the degradation process compared to a sample with a smaller tapering gradient. Marginal efficiency droop of only 4.55% as well as 66% improved light output power, were identified for the proposed design under a current density of approximately 100 A/cm<sup>2</sup>. It was unambiguously demonstrated that UVC-LED with a greatly tapered hole injection layer facilitates both electron blocking and hole injection, providing a promising pathway towards the development of high-efficiency UV emitters.
Authors
- Linlin Xu (ORCID: https://orcid.org/0000-0003-0920-925X)
- Feng Wu (ORCID: https://orcid.org/0000-0003-0144-4423)
- Wei Guo (ORCID: https://orcid.org/0000-0002-6233-0529)
- Jiangnan Dai (ORCID: https://orcid.org/0000-0001-9805-8726)
- Yang Peng (ORCID: https://orcid.org/0000-0002-1282-9487)
- Changqing Chen (ORCID: https://orcid.org/0000-0002-8853-9582)
Institutions
- Chinese Academy of Sciences (CN)
- Wuhan National Laboratory for Optoelectronics (CN)
- Ningbo Institute of Industrial Technology (CN)
- Huazhong University of Science and Technology (CN)
Publication Details
- Journal
- Micromachines
- Published
- 2025-12-02
- DOI
- https://doi.org/10.3390/mi16121376
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Hubei Province
- National Key Research and Development Program of China