Tailoring spintronic—optoelectronic functionality in MnSO4 doped ZnTe nanocomposites via lattice strain, defect engineering, and room temperature magnetic ordering

In this study, MnSO4 doped ZnTe nanocomposites were synthesized via a polyethylene glycol (PEG) assisted thermal process (190 °C, 9 h), and structural, morphological, optical, and magnetic properties were systematically studied to establish correlations between structure and property. By analyzing Williamson-Hall data via X-ray diffraction (XRD), we confirmed that the Mn2+ had been successfully incorporated into the ZnTe lattice, indicating peak shifts, new reflections (211), (103) and strains within the lattice. Raman spectroscopy revealed phonon softening shift from 177 cm−1 to 170—175 cm−1, asymmetric broadening, and Mn-Te vibrational modes at 250 cm−1, indicating Mn2+ induced lattice distortion. Polycrystalline particles were observed with enhanced surface roughness and porosity when scanned with scanning electron microscopes (SEM’s), and their crystallinity was confirmed with selected-area electron diffraction (SAED’s). TEM observations revealed that MnSO4 particles dispersed on the ZnTe support were non-uniform and relatively large, indicating significant particle aggregation. As shown in PL spectroscopy, defects 440 nm—536 nm are generated by Mn2+ intra-d-transitions and defects caused by doping, for example, Zn vacancies have been observed. Interestingly, vibration sample magnetometer measurements demonstrated distinct hysteresis loops 300 K at room temperature, highlighting the potential for spintronics applications. In this work, we demonstrate that MnSO4 doped ZnTe can serve as both an optoelectronic device and a magnetic device with tunable magnetic and optical properties.

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Publication Details

Journal
Journal of Materials Science Materials in Electronics
Published
2025-12-01
DOI
https://doi.org/10.1007/s10854-025-16264-y
Primary Topic
ZnO doping and properties
Type
article
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article

Tailoring spintronic—optoelectronic functionality in MnSO4 doped ZnTe nanocomposites via lattice strain, defect engineering, and room temperature magnetic ordering

K. Kaviyarasu, L. Kotsedi
Journal of Materials Science Materials in Electronics
ZnO doping and properties
article

Tailoring spintronic—optoelectronic functionality in MnSO4 doped ZnTe nanocomposites via lattice strain, defect engineering, and room temperature magnetic ordering

K. Kaviyarasu, L. Kotsedi
article en

Abstract

In this study, MnSO4 doped ZnTe nanocomposites were synthesized via a polyethylene glycol (PEG) assisted thermal process (190 °C, 9 h), and structural, morphological, optical, and magnetic properties were systematically studied to establish correlations between structure and property. By analyzing Williamson-Hall data via X-ray diffraction (XRD), we confirmed that the Mn2+ had been successfully incorporated into the ZnTe lattice, indicating peak shifts, new reflections (211), (103) and strains within the lattice. Raman spectroscopy revealed phonon softening shift from 177 cm−1 to 170—175 cm−1, asymmetric broadening, and Mn-Te vibrational modes at 250 cm−1, indicating Mn2+ induced lattice distortion. Polycrystalline particles were observed with enhanced surface roughness and porosity when scanned with scanning electron microscopes (SEM’s), and their crystallinity was confirmed with selected-area electron diffraction (SAED’s). TEM observations revealed that MnSO4 particles dispersed on the ZnTe support were non-uniform and relatively large, indicating significant particle aggregation. As shown in PL spectroscopy, defects 440 nm—536 nm are generated by Mn2+ intra-d-transitions and defects caused by doping, for example, Zn vacancies have been observed. Interestingly, vibration sample magnetometer measurements demonstrated distinct hysteresis loops 300 K at room temperature, highlighting the potential for spintronics applications. In this work, we demonstrate that MnSO4 doped ZnTe can serve as both an optoelectronic device and a magnetic device with tunable magnetic and optical properties.

Journal of Materials Science Materials in ElectronicsVol. 36(34)
University of South Africa (ZA), National Research Foundation (ZA)
Openalex Percentile: Top 69%
ZnO doping and properties
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