Glass-Based 4-in-1 High-Voltage Micro-LED Package for High-Brightness Mini-LED Backlight Applications
A novel four-in-one (4-in-series) MicroLED-in-Package (MiP4) architecture is demonstrated for the first time, integrating four sub-85 µm blue micro-LED (µ-LED) dies on a transparent glass substrate through a redistribution-layer (RDL) interconnection process. The MiP4 device operates natively at 16 V, eliminating the need for step-down converters and simplifying high-voltage backlight driving circuits. The transparent glass carrier enables efficient light extraction, excellent thermal dissipation, and uniform emission. Electrical and optical characterization of dual- (B2), triple- (B3), and quad-chip (B4) devices shows ideal voltage scalability (8 V, 12 V, 16 V) and stable emission at 450 ± 2 nm with minimal FWHM broadening (22-29 nm). Compared with a commercial LED, the MiP4 delivers 1.8× higher optical power (~41.8 mW) despite its active area being only ~1/70 that of the reference device (20,000 µm<sup>2</sup> vs. 1,350,000 µm<sup>2</sup>), yielding a dramatically enhanced luminous flux density of 64 lm/mm<sup>2</sup> at 50 mA. Furthermore, pulse-driven measurements under 2%, 5%, and 10% duty cycles verify excellent thermal stability and minimal spectral shift (<1 nm), confirming the device's robustness and energy efficiency. This first-of-its-kind 4-in-1 high-voltage glass-based µ-LED package provides a scalable and manufacturable route toward next-generation ultra-thin, high-brightness Mini-LED backlight and optical communication systems.
Authors
- Tzu‐Yi Lee (ORCID: https://orcid.org/0009-0004-8355-3766)
- Fang‐Chung Chen (ORCID: https://orcid.org/0000-0002-4131-3893)
- Li‐Yin Chen (ORCID: https://orcid.org/0000-0002-5607-1428)
- Hao‐Chung Kuo (ORCID: https://orcid.org/0000-0002-9373-4649)
- Chia-Hung Tsai (ORCID: https://orcid.org/0000-0002-9792-1169)
- Chien-Chi Huang (ORCID: https://orcid.org/0009-0000-7028-7033)
Institutions
- National Yang Ming Chiao Tung University (TW)
- Taiwan Forestry Research Institute (TW)
Publication Details
- Journal
- Nanomaterials
- Published
- 2025-12-01
- DOI
- https://doi.org/10.3390/nano15231818
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Science and Technology Council