Ce/Mn/Ta/Sb Multi‐Doped Bi ₄ Ti ₃ O ₁₂ Piezoelectric Ceramics for High‐Temperature Sensing Applications

To address the issue of low piezoelectric coefficient in Bi 4 Ti 3 O 12 (BIT)‐based piezoelectric ceramics, A/B‐site co‐doped BIT ceramics Bi 3.971 Ce 0.03 Ti 2.99− x Mn 0.01 (Ta 1/3 Sb 2/3 ) x O 12 (BCTMTS‐100 x , x = 0.0–0.05) were prepared via solid‐state reaction. The effects of Ta/Sb co‐doping on grain structure, domain configuration, and piezoelectric/ferroelectric properties were systematically investigated. The results indicate that Ta/Sb co‐doping can promote the transformation of ceramic microstructure. The Ta/Sb co‐doping significantly enhanced the piezoelectric coefficient ( d 33 = 37.0 pC/N) while maintaining a high curie temperature ( T C = 670°C) and excellent high‐temperature resistivity ( ρ = 4.1 × 10 6 Ω cm at 500°C). Both the piezoelectric coefficient ( d 33 ) of BCTMTS‐3 ceramics and the charge sensitivity of the assembled piezoelectric vibration sensor exhibited remarkable thermal stability. These results demonstrate that BCTMTS‐3 ceramics possess great potential for high‐temperature sensing applications.