Increasing the Fluorescence Efficiency of Ti$${}^{\mathbf{3+}}:\mathbf{Al}_{\mathbf{2}}$$O$${}_{\mathbf{3}}$$ Crystal under Cryogenic Cooling and Diode Pumping at 454 and 507 nm
In this study, the temperature dependence of the fluorescence of a Ti $${}^{3+}:\textrm{Al}_{2}$$ O $${}_{3}$$ crystal excited by radiation with wavelengths of 507 and 454 nm was measured. The fluorescence quantum yield was determined, exceeding 100 $$\%$$ and reaching 113 $$\%$$ in the cryogenic temperature range when the crystal was excited by 454 nm radiation.
Authors
- G. N. Nikolaev
- D. V. Yakovin (ORCID: https://orcid.org/0000-0001-8508-7667)
- А. В. Грибанов (ORCID: https://orcid.org/0000-0003-1171-1476)
- М. D. Yakovin
Institutions
- Russian Academy of Sciences (RU)
- Institute of Automation and Electrometry (RU)
Publication Details
- Journal
- Optoelectronics Instrumentation and Data Processing
- Published
- 2025-10-01
- DOI
- https://doi.org/10.3103/s8756699025700761
- Primary Topic
- Luminescence Properties of Advanced Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00