Increasing the Fluorescence Efficiency of Ti$${}^{\mathbf{3+}}:\mathbf{Al}_{\mathbf{2}}$$O$${}_{\mathbf{3}}$$ Crystal under Cryogenic Cooling and Diode Pumping at 454 and 507 nm

In this study, the temperature dependence of the fluorescence of a Ti $${}^{3+}:\textrm{Al}_{2}$$ O $${}_{3}$$ crystal excited by radiation with wavelengths of 507 and 454 nm was measured. The fluorescence quantum yield was determined, exceeding 100 $$\%$$ and reaching 113 $$\%$$ in the cryogenic temperature range when the crystal was excited by 454 nm radiation.

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Publication Details

Journal
Optoelectronics Instrumentation and Data Processing
Published
2025-10-01
DOI
https://doi.org/10.3103/s8756699025700761
Primary Topic
Luminescence Properties of Advanced Materials
Type
article
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article

Increasing the Fluorescence Efficiency of Ti$${}^{\mathbf{3+}}:\mathbf{Al}_{\mathbf{2}}$$O$${}_{\mathbf{3}}$$ Crystal under Cryogenic Cooling and Diode Pumping at 454 and 507 nm

G. N. Nikolaev, D. V. Yakovin, А. В. Грибанов, М. D. Yakovin
Optoelectronics Instrumentation and Data Processing
Luminescence Properties of Advanced Materials
article

Increasing the Fluorescence Efficiency of Ti$${}^{\mathbf{3+}}:\mathbf{Al}_{\mathbf{2}}$$O$${}_{\mathbf{3}}$$ Crystal under Cryogenic Cooling and Diode Pumping at 454 and 507 nm

G. N. Nikolaev, D. V. Yakovin, А. В. Грибанов, М. D. Yakovin
article en

Abstract

In this study, the temperature dependence of the fluorescence of a Ti $${}^{3+}:\textrm{Al}_{2}$$ O $${}_{3}$$ crystal excited by radiation with wavelengths of 507 and 454 nm was measured. The fluorescence quantum yield was determined, exceeding 100 $$\%$$ and reaching 113 $$\%$$ in the cryogenic temperature range when the crystal was excited by 454 nm radiation.

Optoelectronics Instrumentation and Data ProcessingVol. 61(5)
Russian Academy of Sciences (RU), Institute of Automation and Electrometry (RU)
Openalex Percentile: Top 69%
Luminescence Properties of Advanced Materials
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