Contrasting properties of free carriers in <i>n</i> - and <i>p</i> -type Sb2Se3

We report persistent photoconductivity in p-type Sb2Se3 single crystals doped with Cd or Zn, where enhanced conductivity remains for hours after illumination ceases at temperatures below ∼25 K. Comparative transport and infrared absorption measurements, including on n-type Cl-doped counterparts, reveal strong indications that hole transport in Sb2Se3 is more strongly affected by intrinsic carrier scattering than electron transport. These results point to a fundamental asymmetry in charge carrier dynamics and highlight the potential role of polaronic effects in limiting hole mobility in this quasi-one-dimensional semiconductor.