Optical control of the fluorescence spatial hole burning effect in monolayer WS ₂

Doping plays a crucial role in both electrical and optical properties of semiconductors. In this work, we report observation, as well as optical control, of the fluorescence spatial hole burning effect in monolayer WS 2 . We demonstrate that the pronounced exciton-exciton annihilation process, in combination with the efficient capture of holes by intrinsic sulfur vacancy defects, induces a significant photo-doping effect and eventually leads to fluorescence spatial hole burning. By means of a dual-beam pumping fluorescence imaging technique, we reveal that the recovery process of the spatial hole burning effect exhibits a double-exponential behavior. The fast recovery process originates from the release of trapped holes under the illumination of the probe beam, while the slow process corresponds to the re-adsorption of electronegative gas molecules. Surprisingly, our results demonstrate that the electronegative sulfur vacancies can achieve ultralong-term storage of holes. Moreover, both the release and the rate of release of holes can be fully controlled by laser irradiation. These findings demonstrate the great potential of transition metal dichalcogenides in the development of optically-control excitonic devices.