Depletion region width of a ferroelectric heterostructure interface by surface potential measurements under illumination

A method for measuring the depletion region width at oxide heterostructure interfaces is developed. It is demonstrated on bismuth ferrite--chromite thin films that exhibit p-type behavior and form a p--n-like junction when grown on a Nb-doped strontium titanate substrate. Using surface photovoltage measurements with Kelvin probe force microscopy under illumination on films of different thicknesses, a maximum SPV response is identified, revealing the depletion region width. This width also enables estimation of the acceptor concentration in the film, providing a non-destructive approach to probing ferroelectric heterostructures.

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Publication Details

Journal
Physical Review Materials
Published
2025-12-01
DOI
https://doi.org/10.1103/8ctp-3531
Citations
1
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.52
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article

Depletion region width of a ferroelectric heterostructure interface by surface potential measurements under illumination

Marc Lenertz, S. Colis, M. V. Rastei, X. Henning et al.
1 citations
Physical Review Materials
Ferroelectric and Piezoelectric Materials
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article

Depletion region width of a ferroelectric heterostructure interface by surface potential measurements under illumination

Marc Lenertz, S. Colis, M. V. Rastei, X. Henning, Thomas Fix, A. Dinia, C. Hu, A. Bagard
article en
1 citations

Abstract

A method for measuring the depletion region width at oxide heterostructure interfaces is developed. It is demonstrated on bismuth ferrite--chromite thin films that exhibit p-type behavior and form a p--n-like junction when grown on a Nb-doped strontium titanate substrate. Using surface photovoltage measurements with Kelvin probe force microscopy under illumination on films of different thicknesses, a maximum SPV response is identified, revealing the depletion region width. This width also enables estimation of the acceptor concentration in the film, providing a non-destructive approach to probing ferroelectric heterostructures.

Physical Review MaterialsVol. 9(12)
Laboratoire des Sciences de l'Ingénieur, de l'Informatique et de l'Imagerie (FR), Institut de Physique et Chimie des Matériaux de Strasbourg (FR), Université de Strasbourg (FR)
Openalex Percentile: Top 30%
Ferroelectric and Piezoelectric Materials
0.52
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