720 V quasi-vertical GaN-on-silicon p–n diodes with surge capability fabricated using selective area growth

This work demonstrates, for the first time, avalanche breakdown capability in quasi-vertical gallium nitride (GaN) on silicon (Si) substrates employing localized epitaxial growth. On industry-standard 200 mm wafers, we integrated an 8 μm thick GaN drift layer onto Si, enabling the fabrication of 720 V quasi-vertical p–n diodes. This method yields high-performance power devices in CMOS-compatible cleanrooms at a reduced cost. The GaN p–n junctions exhibit a specific on-resistance of 3.3 mΩ cm2, a current on/off ratio exceeding 1010, and a current density of 1.4 kA/cm2 at 10 V. Robust avalanche behavior was confirmed through temperature-dependent reverse bias measurements from 298 to 373 K, and over 3000 over-voltage surge ruggedness was demonstrated by unclamped inductive switching stress tests. These results underscore the advantages of localized epitaxy for achieving high-quality GaN layers on Si, paving the way for scalable integration of high-voltage GaN power devices with conventional Si technology.

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Publication Details

Journal
Journal of Applied Physics
Published
2025-12-01
DOI
https://doi.org/10.1063/5.0299842
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26
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article

720 V quasi-vertical GaN-on-silicon p–n diodes with surge capability fabricated using selective area growth

Junrui Lyu, Hala El Rammouz, Julien Buckley, Srabanti Chowdhury et al.
1 citations
Journal of Applied Physics
GaN-based semiconductor devices and materials
1.26
article

720 V quasi-vertical GaN-on-silicon p–n diodes with surge capability fabricated using selective area growth

Junrui Lyu, Hala El Rammouz, Julien Buckley, Srabanti Chowdhury, Thomas Kaltsounis, Xinyi Wen, A. Marcuzzi, Matteo Meneghini, Mohammed El Amrani, David Plaza Arguello, Gaudenzio Meneghesso, Matthew Charles, Zakariae M'Qaddem
article en
1 citations

Abstract

This work demonstrates, for the first time, avalanche breakdown capability in quasi-vertical gallium nitride (GaN) on silicon (Si) substrates employing localized epitaxial growth. On industry-standard 200 mm wafers, we integrated an 8 μm thick GaN drift layer onto Si, enabling the fabrication of 720 V quasi-vertical p–n diodes. This method yields high-performance power devices in CMOS-compatible cleanrooms at a reduced cost. The GaN p–n junctions exhibit a specific on-resistance of 3.3 mΩ cm2, a current on/off ratio exceeding 1010, and a current density of 1.4 kA/cm2 at 10 V. Robust avalanche behavior was confirmed through temperature-dependent reverse bias measurements from 298 to 373 K, and over 3000 over-voltage surge ruggedness was demonstrated by unclamped inductive switching stress tests. These results underscore the advantages of localized epitaxy for achieving high-quality GaN layers on Si, paving the way for scalable integration of high-voltage GaN power devices with conventional Si technology.

Journal of Applied PhysicsVol. 138(21)
University of Padua (IT), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Istituto Nazionale di Fisica Nucleare, Sezione di Padova (IT), Laboratoire d'Électronique des Technologies de l'Information (FR), Osservatorio Astronomico di Padova (IT), Université Grenoble Alpes (FR), Stanford University (US)
Openalex Percentile: Top 15%
GaN-based semiconductor devices and materials
1.26
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