Low-temperature ALD-grown SnO <sub> <i>x</i> </sub> interlayer for scalable and stable p–i–n perovskite solar cells and modules
ALD-SnO x at 80 °C eliminates ETL defects at the PC 61 BM interface, achieving 19.2% PCE for devices, 14.12% for modules, and >90% retention after 3000 h, overcoming ALD sensitivity issues for stable, scalable, and commercially viable p–i–n PSCs.
Authors
- Keum‐Jin Ko (ORCID: https://orcid.org/0000-0002-9510-7227)
- Hock Beng Lee (ORCID: https://orcid.org/0000-0002-0697-0556)
- Vinayak Vitthal Satale (ORCID: https://orcid.org/0000-0002-9494-1850)
- Barkha Tyagi (ORCID: https://orcid.org/0000-0001-5787-5316)
- Jae‐Wook Kang (ORCID: https://orcid.org/0000-0002-1412-6179)
- Dohyung Kim (ORCID: https://orcid.org/0000-0001-5399-3710)
- Asmaa Mohamed (ORCID: https://orcid.org/0000-0002-1966-0389)
Institutions
- South Valley University (EG)
- Korea Electric Power Corporation (South Korea) (KR)
- University of Oxford (GB)
- Jeonbuk National University (KR)
Publication Details
- Journal
- Sustainable Energy & Fuels
- Published
- 2025-12-01
- DOI
- https://doi.org/10.1039/d5se01332a
- Primary Topic
- Perovskite Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00