Analysis and Modeling of Amorphous InGaZnO Metal–Insulator–Semiconductor Schottky Diode

In this article, we prepared InSnO/Al 2 O 3 /InGaZnO metal–insulator–semiconductor (MIS) Schottky diodes. The current–voltage characteristics of MIS diodes were measured, and the effect of the insulator on the diode performance was analyzed. Besides, the current transfer mechanism of the MIS diode was explored. The results showed that thermionic emission and trap‐assisted tunneling are the main conducting mechanisms of the diode. Finally, a dedicated current model of the InGaZnO MIS diodes was established based on the analysis. According to the parameter extraction, it can be obtained that the effective barrier height of MIS diodes is 0.76 eV, the ideality factor is 3.63, and the current on/off ratio is 1.65 × 10 4 .