Selenium Thin Film Based Artificial Visual Synapse Using Non-volatile Light Soaking Effect

In this study, non-volatile activation of Se thin film photovoltaic device was characterized for the self-powered artificial visual synapse applications in neuromorphic systems. Short circuit current density after light soaking treatment was characterized to compare non-voltaic activation/passivation of photovoltaic performance for TiO2/Se and ZnMgO/Se heterointerface devices. TiO2/Se and ZnMgO/Se devices respectively decreased and increased their short circuit density with increasing light soaking time. ZnMgO/Se device also showed reversible decrease after light soaking under dark condition. The self-powered artificial synapse can be developed by using the similarity between non-volatile potentiation/depression of synapse and non-volatile activation/passivation of ZnMgO/Se photovoltaic device.

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Publication Details

Journal
IEEJ Transactions on Sensors and Micromachines
Published
2025-11-30
DOI
https://doi.org/10.1541/ieejsmas.145.257
Primary Topic
Advanced Memory and Neural Computing
Type
article
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article

Selenium Thin Film Based Artificial Visual Synapse Using Non-volatile Light Soaking Effect

Taizo R. Kobayashi, Zacharie Jehl Li‐Kao, Eiko Shinno, Akira Gotanda
IEEJ Transactions on Sensors and Micromachines
Advanced Memory and Neural Computing
article

Selenium Thin Film Based Artificial Visual Synapse Using Non-volatile Light Soaking Effect

Taizo R. Kobayashi, Zacharie Jehl Li‐Kao, Eiko Shinno, Akira Gotanda
article en

Abstract

In this study, non-volatile activation of Se thin film photovoltaic device was characterized for the self-powered artificial visual synapse applications in neuromorphic systems. Short circuit current density after light soaking treatment was characterized to compare non-voltaic activation/passivation of photovoltaic performance for TiO2/Se and ZnMgO/Se heterointerface devices. TiO2/Se and ZnMgO/Se devices respectively decreased and increased their short circuit density with increasing light soaking time. ZnMgO/Se device also showed reversible decrease after light soaking under dark condition. The self-powered artificial synapse can be developed by using the similarity between non-volatile potentiation/depression of synapse and non-volatile activation/passivation of ZnMgO/Se photovoltaic device.

IEEJ Transactions on Sensors and MicromachinesVol. 145(12)
Ritsumeikan University (JP), Universitat Politècnica de Catalunya (ES)
Openalex Percentile: Top 63%
Advanced Memory and Neural Computing
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