Selenium Thin Film Based Artificial Visual Synapse Using Non-volatile Light Soaking Effect
In this study, non-volatile activation of Se thin film photovoltaic device was characterized for the self-powered artificial visual synapse applications in neuromorphic systems. Short circuit current density after light soaking treatment was characterized to compare non-voltaic activation/passivation of photovoltaic performance for TiO2/Se and ZnMgO/Se heterointerface devices. TiO2/Se and ZnMgO/Se devices respectively decreased and increased their short circuit density with increasing light soaking time. ZnMgO/Se device also showed reversible decrease after light soaking under dark condition. The self-powered artificial synapse can be developed by using the similarity between non-volatile potentiation/depression of synapse and non-volatile activation/passivation of ZnMgO/Se photovoltaic device.
Authors
- Taizo R. Kobayashi (ORCID: https://orcid.org/0000-0001-6716-776X)
- Zacharie Jehl Li‐Kao (ORCID: https://orcid.org/0000-0002-2610-5973)
- Eiko Shinno
- Akira Gotanda
Institutions
- Ritsumeikan University (JP)
- Universitat Politècnica de Catalunya (ES)
Publication Details
- Journal
- IEEJ Transactions on Sensors and Micromachines
- Published
- 2025-11-30
- DOI
- https://doi.org/10.1541/ieejsmas.145.257
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00