Switching Characteristics of Hybrid Multi-Parallel Connected Si IGBT / SiC MOSFET

This paper focuses on the static and dynamic characteristics of Si IGBT/SiC MOSFET hybrid multi-parallel connected devices to improve power conversion efficiency over a wide range of load conditions in power electronics applications. The results demonstrate that the studied Si/SiC hybrid device can improve conduction losses and turn-off losses compared to muti-parallel IGBTs. This study also reveals that the transient current sharing characteristics specific for the hybrid device can deteriorate its electromagnetic noise source performance.