Emergent Global‐Pinning Exchange Bias in van der Waals Magnetic Heterostructures

As magnetoresistive random access memory (MRAM) technology becomes increasingly vital for emerging applications, such as artificial intelligence, the development of cost-effective and miniaturized solutions is essential. van der Waals (vdW) magnets, which can be vertically stacked with various functional blocks, offer promising potential to enhance the performance and scalability of memory devices. Nevertheless, the need for perfect alignment between adjacent layers and finite local interactions at the interfaces often complicates device architectures and leads to high power consumption. Addressing these challenges, a new device configuration with partial overlap while maintaining the global effect would be a promising scheme. Here, using Fe<sub>3</sub>GeTe<sub>2</sub>/MnBi<sub>2</sub>Te<sub>4</sub> (FGT/MBT) as a paradigm, the global-pinning exchange bias (GPEB) effect is successfully achieved with a horizontal pinning distance approaching 100 µm. Specifically, once stacking a small-area MBT on FGT, the entire FGT is fully biased due to magnetic couplings inherent to vdW magnets, as confirmed by the theoretical model. Interlayer coupling and coverage ratio provide additional degrees of freedom to manipulate the GPEB. Remarkably, this emergent GPEB effect is prevalent across vdW heterostructures composed of various vdW magnets. This work expands design flexibility and offers strategies for constructing new in-memory computing devices, opening exciting possibilities for future spintronic applications.

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Publication Details

Journal
Advanced Materials
Published
2025-11-29
DOI
https://doi.org/10.1002/adma.202518642
Primary Topic
2D Materials and Applications
Type
article
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article

Emergent Global‐Pinning Exchange Bias in van der Waals Magnetic Heterostructures

Yongbing Xu, Wei Niu, Jingrui Ma, Kai Gu et al.
Advanced Materials
2D Materials and Applications
article

Emergent Global‐Pinning Exchange Bias in van der Waals Magnetic Heterostructures

Yongbing Xu, Wei Niu, Jingrui Ma, Kai Gu, Yakui Weng, Zhenqi Wu, Lujun Wei, Chao Li, Wei Wang, Shuo Wang, Xiaoqian Zhang, Zhendong Wang, Yang Li, Ping Liu, Xuefeng Wang, Chang Liu, Xiangjie Liu, Xiao‐Ming Ma, Jiacheng Gao, Zhuangzhi Shen, Yong Pu
article en

Abstract

As magnetoresistive random access memory (MRAM) technology becomes increasingly vital for emerging applications, such as artificial intelligence, the development of cost-effective and miniaturized solutions is essential. van der Waals (vdW) magnets, which can be vertically stacked with various functional blocks, offer promising potential to enhance the performance and scalability of memory devices. Nevertheless, the need for perfect alignment between adjacent layers and finite local interactions at the interfaces often complicates device architectures and leads to high power consumption. Addressing these challenges, a new device configuration with partial overlap while maintaining the global effect would be a promising scheme. Here, using Fe<sub>3</sub>GeTe<sub>2</sub>/MnBi<sub>2</sub>Te<sub>4</sub> (FGT/MBT) as a paradigm, the global-pinning exchange bias (GPEB) effect is successfully achieved with a horizontal pinning distance approaching 100 µm. Specifically, once stacking a small-area MBT on FGT, the entire FGT is fully biased due to magnetic couplings inherent to vdW magnets, as confirmed by the theoretical model. Interlayer coupling and coverage ratio provide additional degrees of freedom to manipulate the GPEB. Remarkably, this emergent GPEB effect is prevalent across vdW heterostructures composed of various vdW magnets. This work expands design flexibility and offers strategies for constructing new in-memory computing devices, opening exciting possibilities for future spintronic applications.

Advanced MaterialsVol. 38(8)
University of Science and Technology of China (CN), Shenzhen University (CN), Nanjing Institute of Technology (CN), Southern University of Science and Technology (CN), Nanjing University of Posts and Telecommunications (CN), Peng Cheng Laboratory (CN), Collaborative Innovation Center of Advanced Microstructures (CN), Ministry of Education (BD), Shenzhen Technology University (CN), Southeast University (CN)
Openalex Percentile: Top 69%
2D Materials and Applications
DOISourceOpenAlex
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