Anomalous Magnetoresistance in an Antiferromagnetic Kagome Semimetal Heterostructures
Abstract Antiferromagnetic Kagome semimetals have attracted tremendous attention for their potential application in antiferromagnetic topological spintronics. Effectively manipulating Kagome antiferromagnetic states can reveal abundant physical phenomena induced from quantum interactions between topology, spin, and correlation. Here, tunable spin textures of FeSn thin films are achieved via introducing interfacial Dzyaloshinskii–Moriya interaction from heavy‐metal Pt overlayer. With increasing FeSn thickness, the variable spin textures result in a gradual change in Hall resistivity and magnetoresistance. Importantly, an unconventional damped oscillatory‐like behavior of magnetoresistance at relatively low magnetic fields can be observed in thin FeSn/Pt samples. This oscillatory‐like magnetoresistance feature is confirmed to be related to the special topological spin textures revealed by magnetic force microscopy measurements. The formation of a rich variety of topological spin textures in association with exotic magneto‐transport properties in antiferromagnetic Kagome FeSn heterostructures offers new perspectives for understanding the novel emergent phenomena in Kagome antiferromagnets.
Authors
- Hanjie Guo
- Yongcheng Deng (ORCID: https://orcid.org/0000-0003-4047-5388)
- Qiyuan Feng (ORCID: https://orcid.org/0000-0002-4339-8237)
- Xionghua Liu (ORCID: https://orcid.org/0000-0003-1237-2787)
- Qingyou Lu (ORCID: https://orcid.org/0000-0003-1934-8165)
- Weibin Cui (ORCID: https://orcid.org/0000-0002-9295-8296)
- Xiaomin Zhang (ORCID: https://orcid.org/0000-0003-0535-7060)
- Kaiyou Wang (ORCID: https://orcid.org/0000-0002-6017-7575)
- Jing Zhang (ORCID: https://orcid.org/0000-0002-3752-8365)
- Dong Zhang (ORCID: https://orcid.org/0009-0005-6370-7884)
- Yubin Hou (ORCID: https://orcid.org/0000-0001-6314-5598)
Institutions
- University of Science and Technology of China (CN)
- Chinese Academy of Sciences (CN)
- High Magnetic Field Laboratory (CN)
- Songshan Lake Materials Laboratory (CN)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
- Northeastern University (CN)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2025-11-29
- DOI
- https://doi.org/10.1002/adfm.202519240
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00