Essential role of temperature-dependent band gaps in (p × n)-type transverse thermoelectrics: partial gap analysis of Re <sub>4</sub> Si <sub>7</sub>
New analysis allows temperature-dependent energy gap of transverse thermoelectrics to be measured from experimental resistivity and Seebeck data.
Authors
- Boya Cui
- Jiong Yang (ORCID: https://orcid.org/0000-0002-5862-5981)
- Xueting Yan (ORCID: https://orcid.org/0000-0001-6898-7161)
- Martín A. Mosquera (ORCID: https://orcid.org/0000-0003-2170-5651)
- M. Grayson (ORCID: https://orcid.org/0000-0003-4914-5043)
- Leighton O. Jones (ORCID: https://orcid.org/0000-0001-6657-2632)
- George Chappell Schatz (ORCID: https://orcid.org/0000-0001-5837-4740)
- Juncen Li (ORCID: https://orcid.org/0000-0001-7868-6100)
- Charles J. Zeman (ORCID: https://orcid.org/0000-0001-5275-0469)
- Xin Li (ORCID: https://orcid.org/0000-0001-8884-095X)
- Qing Shao (ORCID: https://orcid.org/0000-0003-3206-3172)
Institutions
- Northwestern University (US)
- Shanghai University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2025-11-29
- DOI
- https://doi.org/10.1039/d5ta06495c
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00