HV Pulse Generator with Short Triggering Delay for Impact Ionization Triggering

We propose a fast pulse generator for Impact Ionization (II) triggering based on COTS components: ultra-boosted HV SiC MOS transistor stage as a driver of a fast Marx Generator with small thyristors triggered in II mode. Our gate boosting driver provides up to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;600 ~\mathrm{V}$</tex> output voltage with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt; 1 \text{kV} / \text{ns}$</tex> slew rate and is capable to deliver up to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;60 ~\mathrm{A}$</tex> peak current. 2 kV rated SiC MOSFETs with such aggressive gate boosting can reach <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;1.4 \text{kV} / \text{ns}$</tex> slew rate of its drain voltage with a lifetime acceptable for our application (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;6 \times 10^{7}$</tex> pulses). Our setup with five parallel SiC MOSFETs and four stage Marx generator with D2PAK thyristors triggered in II mode is generating <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;10 \text{kV}$</tex> peak voltage with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;30 \text{kV} / \text{ns}$</tex> slew rate and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;400 ~\mathrm{A}$</tex> peak current with a triggering delay of 10 ns.