Simulation Analysis of the Chemical Mechanical Polishing Process for Monocrystal 4H-Silicon Carbide Based on Molecular Dynamics

This paper delves into the mechanism of the chemical and mechanical action during chemical mechanical polishing (CMP) of monocrystal silicon carbide (SiC) through the molecular dynamics (MD) method. The oxidation simulation showed that the Si atoms mainly reacted in the form of Si-O and Si-H, while the C atoms are in the form of C-O. The impact of the sliding depth and the polishing speed on the SiC workpiece was analyzed. Results show that more substrate atoms are removed as the polishing depth and speed increase. When the polishing depth reached 8 angstroms, 624 atoms were removed from the substrate. At the same time, the increased diamond polishing speed expands the polishing area. This reduces the indentation of the cut atoms on the surface of the workpiece and increases the removal efficiency of the SiC surface atoms, and when the polishing speed reached 125 m/s, the instantaneous temperature reached about 800 °C. In short, the polishing depth and speed have a significant impact on the polishing process, and the polishing depth has a more sophisticated influence on the atom removal rate.