Synthesis and Optoelectronic Properties of Quinary Wurtzite Copper-Based Chalcogenide Cu <sub>3</sub> MInSnS <sub>6</sub> (M = Cd, Co and Ni) Nanocrystals

Quinary wurtzite copper-based chalcogenide, Cu 3 MInSnS 6 (M [Formula: see text] Cd, Co, Ni), nanocrystals (NCs) have been synthesized using a hot-injection method. The NCs were characterized by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and absorption spectroscopy. The NCs exhibit strong absorption across the visible spectrum with bandgaps ranging from 1.44[Formula: see text]eV to 1.54[Formula: see text]eV, ideal for thin-film solar cell applications. Photoresponse measurements demonstrate that the current under illumination is enhanced compared to the dark current in all thin-film samples fabricated from these NCs. Among the tested samples, the Cu 3 CdInSnS 6 -based film displayed the highest [Formula: see text]/[Formula: see text] ratio. A prototype solar cell fabricated with Cu 3 CdInSnS 6 NCs achieved a power conversion efficiency (PCE) of 0.73%. This work broadens the exploration of quinary copper-based chalcogenides for photovoltaic (PV) applications and offers insights that assist in the development of new solar cell absorbers.

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Journal
NANO
Published
2025-11-28
DOI
https://doi.org/10.1142/s1793292026500451
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
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article

Synthesis and Optoelectronic Properties of Quinary Wurtzite Copper-Based Chalcogenide Cu 3 MInSnS 6 (M = Cd, Co and Ni) Nanocrystals

Yanping Miao, Binbin Zhang, Dehui Li, Qiao Gao et al.
NANO
Chalcogenide Semiconductor Thin Films
article

Synthesis and Optoelectronic Properties of Quinary Wurtzite Copper-Based Chalcogenide Cu 3 MInSnS 6 (M = Cd, Co and Ni) Nanocrystals

Yanping Miao, Binbin Zhang, Dehui Li, Qiao Gao, Huiping Zhu, Yiming Guo
article en

Abstract

Quinary wurtzite copper-based chalcogenide, Cu 3 MInSnS 6 (M [Formula: see text] Cd, Co, Ni), nanocrystals (NCs) have been synthesized using a hot-injection method. The NCs were characterized by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and absorption spectroscopy. The NCs exhibit strong absorption across the visible spectrum with bandgaps ranging from 1.44[Formula: see text]eV to 1.54[Formula: see text]eV, ideal for thin-film solar cell applications. Photoresponse measurements demonstrate that the current under illumination is enhanced compared to the dark current in all thin-film samples fabricated from these NCs. Among the tested samples, the Cu 3 CdInSnS 6 -based film displayed the highest [Formula: see text]/[Formula: see text] ratio. A prototype solar cell fabricated with Cu 3 CdInSnS 6 NCs achieved a power conversion efficiency (PCE) of 0.73%. This work broadens the exploration of quinary copper-based chalcogenides for photovoltaic (PV) applications and offers insights that assist in the development of new solar cell absorbers.

NANO
Changchun University of Chinese Medicine (CN), Jilin Agricultural University (CN)
Openalex Percentile: Top 63%
Chalcogenide Semiconductor Thin Films
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