Gate‐Tunable Te‐WSe <sub>2</sub> Heterojunction Diodes for Polarization Detection and Logic Operation Application
The integration of multidimensional optical sensing and computing within a single device is critical for next-generation optoelectronics but remains challenging due to material limitations and complex architectures. 2D van der Waals heterostructures(vdWHs) offer a promising platform for such multifunctionality. Here, a gate-tunable Te-WSe<sub>2</sub> heterojunction device is demonstrated that simultaneously achieves high-performance polarization-sensitive photodetection and reconfigurable multimode optoelectronic logic operations. By exploiting the strong in-plane anisotropy of Te and the gate-tunable band alignment at the heterointerface, the device exhibits a widely adjustable rectification ratio exceeding 10<sup>5</sup>, a high responsivity of 667.9 mA W<sup>-1</sup>, and a gate-tunable polarization anisotropy ratio(AR) from 1.27 to 17.8. Operating in a photovoltaic mode, the device achieves a specific detectivity over 10<sup>11</sup> Jones and a fast response time of ≈25 µs. Furthermore, secure optical communication and multimode logic gates are demonstrated, where optical and electrical inputs are programmatically processed to execute encryption and Boolean operations. This work overcomes key limitations in polarization photodetection and provides a pathway toward compact, intelligent optoelectronic systems for advanced information processing.
Authors
- Tangxin Li (ORCID: https://orcid.org/0009-0006-5877-7316)
- Mengyang Kang
- Xiaoyong Jiang
- Luyao Guo (ORCID: https://orcid.org/0000-0001-5404-4648)
- Jinshui Miao (ORCID: https://orcid.org/0000-0002-3041-1105)
- Weida Hu (ORCID: https://orcid.org/0000-0001-5278-8969)
- Mengjia Xia
- Qixiao Zhao
- Fu Xiao (ORCID: https://orcid.org/0000-0002-3779-3943)
- Г. Н. Панин (ORCID: https://orcid.org/0000-0003-3658-6958)
- C. G. Zhuang (ORCID: https://orcid.org/0009-0008-3321-1417)
- Yihong She
- Yueyue Fang (ORCID: https://orcid.org/0009-0005-0915-4166)
- Bingkun Ye
- Nengjie Huo (ORCID: https://orcid.org/0000-0002-5788-7779)
- Xinyu Ma (ORCID: https://orcid.org/0009-0006-7477-2216)
- Hongyu Chen (ORCID: https://orcid.org/0000-0002-5325-9249)
Institutions
- South China Normal University (CN)
- Shanghai Institute of Technical Physics (CN)
- Institute of Microelectronics Technology and High Purity Materials (RU)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Small Methods
- Published
- 2025-11-28
- DOI
- https://doi.org/10.1002/smtd.202501791
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00