Ultrafast Laser-Induced Demagnetization and Valley Polarization in a Room-Temperature Altermagnetic Cr <sub>2</sub> MoS <sub>4</sub> Monolayer

Achieving ultrafast room-temperature magnetism control in two-dimensional (2D) altermagnetic (AM) materials is a major challenge in spintronics. In this study, we identify Cr<sub>2</sub>MoS<sub>4</sub> as a promising material to overcome these limitations, combining exceptional stability, robust altermagnetism, and laser-tunable electronic and magnetic properties. Cr<sub>2</sub>MoS<sub>4</sub> features an in-plane magnetic easy axis with a magnetic anisotropy energy of 0.24 meV/Cr and a high critical temperature of 400 K, well-above room temperature. Upon laser pulse irradiation, Cr<sub>2</sub>MoS<sub>4</sub> undergoes rapid electron and phonon temperature rises, resulting in ultrafast demagnetization within ∼200 fs─comparable to antiferromagnetic Dirac semimetals. Transient thermal effects further induce structural distortions, breaking mirror symmetry and generating valley polarization in Cr<sub>2</sub>MoS<sub>4</sub>. Beyond single-pulse excitation, we apply a double-pulse with adjustable time delays (200-1000 fs), enabling precise modulation of spin dynamics. Tuning the delay allows for control over demagnetization times, amplification of demagnetization effects, and even the reversal of the recovery process into repeated demagnetization. These findings establish Cr<sub>2</sub>MoS<sub>4</sub> as an excellent platform for spintronic applications and offer new insights into ultrafast optical control of AM spin dynamics.

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Journal
The Journal of Physical Chemistry Letters
Published
2025-11-27
DOI
https://doi.org/10.1021/acs.jpclett.5c02854
Primary Topic
2D Materials and Applications
Type
article
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article

Ultrafast Laser-Induced Demagnetization and Valley Polarization in a Room-Temperature Altermagnetic Cr 2 MoS 4 Monolayer

Zhen Gao, Tingli He, Yalong Jiao, Aijun Du et al.
The Journal of Physical Chemistry Letters
2D Materials and Applications
article

Ultrafast Laser-Induced Demagnetization and Valley Polarization in a Room-Temperature Altermagnetic Cr 2 MoS 4 Monolayer

Zhen Gao, Tingli He, Yalong Jiao, Aijun Du, Fengxian Ma, Xiaoming Zhang, Ying Liu
article en

Abstract

Achieving ultrafast room-temperature magnetism control in two-dimensional (2D) altermagnetic (AM) materials is a major challenge in spintronics. In this study, we identify Cr<sub>2</sub>MoS<sub>4</sub> as a promising material to overcome these limitations, combining exceptional stability, robust altermagnetism, and laser-tunable electronic and magnetic properties. Cr<sub>2</sub>MoS<sub>4</sub> features an in-plane magnetic easy axis with a magnetic anisotropy energy of 0.24 meV/Cr and a high critical temperature of 400 K, well-above room temperature. Upon laser pulse irradiation, Cr<sub>2</sub>MoS<sub>4</sub> undergoes rapid electron and phonon temperature rises, resulting in ultrafast demagnetization within ∼200 fs─comparable to antiferromagnetic Dirac semimetals. Transient thermal effects further induce structural distortions, breaking mirror symmetry and generating valley polarization in Cr<sub>2</sub>MoS<sub>4</sub>. Beyond single-pulse excitation, we apply a double-pulse with adjustable time delays (200-1000 fs), enabling precise modulation of spin dynamics. Tuning the delay allows for control over demagnetization times, amplification of demagnetization effects, and even the reversal of the recovery process into repeated demagnetization. These findings establish Cr<sub>2</sub>MoS<sub>4</sub> as an excellent platform for spintronic applications and offer new insights into ultrafast optical control of AM spin dynamics.

The Journal of Physical Chemistry LettersVol. 16(49)
Beijing Institute of Technology (CN), Queensland University of Technology (AU), Hebei University of Technology (CN), Beijing Institute of Optoelectronic Technology (CN), Integrated Optoelectronics (Norway) (NO), Quality and Reliability (Greece) (GR), Hebei University (CN), Hebei Normal University (CN)
Openalex Percentile: Top 70%
2D Materials and Applications
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