High-energy ball-milling induced defect centers in hexagonal boron nitride (h-BN) for supercapacitor applications
Hexagonal boron nitride (h-BN), a two-dimensional material known for its thermal stability and robust mechanical properties, is considered in fields ranging from nanoelectronics to energy storage.
Institutions
- Sabancı Üniversitesi (TR)
- University of Connecticut (US)
- National Institute for Research and Development of Isotopic and Molecular Technologies (RO)
Publication Details
- Journal
- Journal of Materials Chemistry A
- Published
- 2025-11-26
- DOI
- https://doi.org/10.1039/d5ta09065b
- Primary Topic
- Graphene research and applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00