Highly efficient current-induced domain wall motion in a room temperature van der Waals magnet

Two-dimensional van der Waals magnets are highly promising for next-generation spintronics. The ferromagnetic material Fe<sub>3</sub>GaTe<sub>2</sub> is especially interesting due to its high Curie temperature. Here we demonstrate highly efficient current-induced domain wall motion in Fe<sub>3</sub>GaTe<sub>2</sub> racetracks via spin-transfer torque that gives rise to the highest domain wall velocity yet reported for any van der Waals magnet. The spin polarization of the conduction electrons was measured via superconducting point-contact measurements revealing that 100% of their spin angular momentum is transferred to the domain walls. The very low threshold current density plus the very high mobility of the domain walls is attributed to the structural perfection of the two-dimensional magnet. We further demonstrate an electrically readable memristive racetrack device with more than four data bits, via precise domain wall positioning. Our work demonstrates that van der Waals magnets are compelling for emerging spintronic applications from room temperature to cryogenic temperatures.

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Publication Details

Journal
Nature Communications
Published
2025-11-27
DOI
https://doi.org/10.1038/s41467-025-66637-4
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.04

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article

Highly efficient current-induced domain wall motion in a room temperature van der Waals magnet

Yicheng Guan, S. Parkin, Wenjie Zhang, Yan Zhang et al.
2 citations
Nature Communications
2D Materials and Applications
1.04
article

Highly efficient current-induced domain wall motion in a room temperature van der Waals magnet

Yicheng Guan, S. Parkin, Wenjie Zhang, Yan Zhang, Yufeng Wu, Ke Xiao, Jae-Chun Jeon
article en
2 citations

Abstract

Two-dimensional van der Waals magnets are highly promising for next-generation spintronics. The ferromagnetic material Fe<sub>3</sub>GaTe<sub>2</sub> is especially interesting due to its high Curie temperature. Here we demonstrate highly efficient current-induced domain wall motion in Fe<sub>3</sub>GaTe<sub>2</sub> racetracks via spin-transfer torque that gives rise to the highest domain wall velocity yet reported for any van der Waals magnet. The spin polarization of the conduction electrons was measured via superconducting point-contact measurements revealing that 100% of their spin angular momentum is transferred to the domain walls. The very low threshold current density plus the very high mobility of the domain walls is attributed to the structural perfection of the two-dimensional magnet. We further demonstrate an electrically readable memristive racetrack device with more than four data bits, via precise domain wall positioning. Our work demonstrates that van der Waals magnets are compelling for emerging spintronic applications from room temperature to cryogenic temperatures.

Nature CommunicationsVol. 16(1)
Max Planck Institute of Microstructure Physics (DE)
Deutsche Forschungsgemeinschaft, Samsung
Openalex Percentile: Top 21%
2D Materials and Applications
1.04
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