Topological spin dynamics in Eu-doped SnTe using spin resonance and magnetic measurements
Eu doping in SnTe raises vacancy formation energy, lowers Sn vacancies, and induces strain and impurity-driven scattering, yielding anisotropic spin–flop transitions and enhanced WAL for quantum device applications.
Authors
- S. K. Srivastava (ORCID: https://orcid.org/0000-0001-9611-1001)
- Subhadip Ghosh (ORCID: https://orcid.org/0009-0002-1706-0141)
Institutions
- Indian Institute of Technology Kharagpur (IN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-11-27
- DOI
- https://doi.org/10.1039/d5tc03104d
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00