Nonlinear Optical Effects Enhanced by Deep Band Crossings

Nonlinear optical (NLO) effects in materials with band crossings have attracted significant research interests due to the divergent band geometric quantities around these crossings. Most current research has focused on band crossings between the valence and conduction bands. However, such crossings are absent in insulators, which are more relevant for NLO applications. In this Letter, we demonstrate that NLO effects can be significantly enhanced by band crossings within the valence or conduction bands, which we designate as "deep band crossings" (DBCs). As an example, in two dimensions, we show that shift conductivity can be substantially enhanced or even divergent due to a mirror-protected "deep Dirac nodal point." In three dimensions, we propose GeTe as an ideal material where shift conductivity is enhanced by "deep Dirac nodal lines." The ubiquity of this enhancement is further confirmed by high-throughput calculations. Other types of DBCs and NLO effects are also discussed. By engineering band crossings between arbitrary bands, our Letter offers a simple, practical, and universal way to enhance NLO effects.

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Publication Details

Journal
Physical Review Letters
Published
2025-11-06
DOI
https://doi.org/10.1103/sqwy-xhdf
Citations
1
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
1.25
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article

Nonlinear Optical Effects Enhanced by Deep Band Crossings

He Li, Yong Xu, Yizhou Liu, Wenhui Duan et al.
1 citations
Physical Review Letters
Topological Materials and Phenomena
1.25
article

Nonlinear Optical Effects Enhanced by Deep Band Crossings

He Li, Yong Xu, Yizhou Liu, Wenhui Duan, Minghui Sun, Nianlong Zou, Chong Wang, Meng Ye, Haowei Chen, Bing‐Lin Gu, Ruiping Guo
article en
1 citations

Abstract

Nonlinear optical (NLO) effects in materials with band crossings have attracted significant research interests due to the divergent band geometric quantities around these crossings. Most current research has focused on band crossings between the valence and conduction bands. However, such crossings are absent in insulators, which are more relevant for NLO applications. In this Letter, we demonstrate that NLO effects can be significantly enhanced by band crossings within the valence or conduction bands, which we designate as "deep band crossings" (DBCs). As an example, in two dimensions, we show that shift conductivity can be substantially enhanced or even divergent due to a mirror-protected "deep Dirac nodal point." In three dimensions, we propose GeTe as an ideal material where shift conductivity is enhanced by "deep Dirac nodal lines." The ubiquity of this enhancement is further confirmed by high-throughput calculations. Other types of DBCs and NLO effects are also discussed. By engineering band crossings between arbitrary bands, our Letter offers a simple, practical, and universal way to enhance NLO effects.

Physical Review LettersVol. 135(22)
Tongji University (CN), China Academy of Engineering Physics (CN), RIKEN Center for Emergent Matter Science (JP), State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University (CN)
Openalex Percentile: Top 15%
Topological Materials and Phenomena
1.25
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