Solution-processed metal oxide synaptic transistor with bilayer Li-ion-conducting gate dielectric
Solution-processed neuromorphic oxide TFT with Li 5 AlO 4 /Li 4 Ti 5 O 12 bilayer dielectric with excellent TFT properties showing high endurance, STP–LTP transition, PPF, and robust potentiation-depression, enabling 92% digit-recognition accuracy.
Authors
- Priyanka Chetri (ORCID: https://orcid.org/0000-0002-7225-8233)
- Pranjit Barman (ORCID: https://orcid.org/0000-0002-7264-1048)
- Subarna Pramanik (ORCID: https://orcid.org/0000-0002-1246-7535)
- Ravindra Kumar Singh (ORCID: https://orcid.org/0000-0003-1142-1954)
- Pijush Kanti Aich (ORCID: https://orcid.org/0009-0009-7988-7292)
- Bhola Nath Pal (ORCID: https://orcid.org/0000-0001-7512-3441)
- Akhilesh Kumar Yadav (ORCID: https://orcid.org/0009-0001-3973-0540)
- Rajarshi Chakraborty (ORCID: https://orcid.org/0000-0003-4927-3168)
Institutions
- Shiv Nadar University (IN)
- Indian Institute of Technology Delhi (IN)
- Banaras Hindu University (IN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-11-27
- DOI
- https://doi.org/10.1039/d5tc02255j
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00