On-chip laser emission from a 2-µm-thick Er <sup>3+</sup> -doped lithium niobate on insulator
We demonstrate a laser emission scheme based on a 2-<i>μ</i>m-thick Er<sup>3+</sup>-doped lithium niobate on insulator (Er:LNOI), using a Fabry-Pérot (FP) cavity with Sagnac loop reflectors (SLRs). The experimental results show a multimode laser output at a central wavelength of 1531.5 nm, with a measured on-chip power of 0.36 mW, and slope efficiency of 0.57%. We enhance the laser power of Er:LNOI lasers via a 2-<i>μ</i>m-thick lithium niobate on insulator (LNOI) with an enlarged mode area. Additionally, it offers high coupling efficiency with the taper-lensed fiber, making it suitable for light sources in lithium niobate based photonic integrated circuits (PICs) and optical communication systems.
Authors
- Guorong Hou (ORCID: https://orcid.org/0000-0002-8831-2580)
- Ping Xu (ORCID: https://orcid.org/0000-0003-1508-4609)
- Jing Lv (ORCID: https://orcid.org/0000-0002-9291-6643)
- Pingyu Zhu (ORCID: https://orcid.org/0000-0002-4725-7028)
- Jiacheng Liu (ORCID: https://orcid.org/0000-0001-8377-4375)
- Hong Zhu (ORCID: https://orcid.org/0000-0002-3008-8889)
- Kun Wang (ORCID: https://orcid.org/0000-0002-3721-8906)
- Yang Wang (ORCID: https://orcid.org/0009-0008-6688-4773)
Institutions
- National University of Defense Technology (CN)
Publication Details
- Journal
- Optics Express
- Published
- 2025-11-26
- DOI
- https://doi.org/10.1364/oe.580200
- Primary Topic
- Photorefractive and Nonlinear Optics
- Type
- article
- Field-Weighted Citation Impact
- 0.00