Robust Self-Trapped Exciton Emission in Sb3+-Engineered Lead-Free Cs4SnBr6 Zero-Dimensional Perovskites

Zero-dimensional (0D) tin halide perovskites have emerged as promising luminescent materials owing to their broadband emission, high quantum yield, and negligible self-absorption. Yet, their luminescence efficiency and stability remain insufficient for practical optoelectronic applications. Here, Sb<sup>3+</sup> dopants are introduced into Cs<sub>4</sub>SnBr<sub>6</sub> through a water-assisted wet ball milling strategy, resulting in bright and thermally robust emission. The doped materials exhibit pronounced self-trapped exciton (STE) luminescence centered at 525 nm with a broad full width at half maximum of 110 nm, a large Stokes shift of approximately ~1.3 eV, and a photoluminescence lifetime of ~0.8 µs. Remarkably, Sb<sup>3+</sup> incorporation boosts the photoluminescence quantum yield (PLQY) up to 64% at room temperature while simultaneously improving thermal stability. Correlated spectroscopic analyses reveal that the Sb<sup>3+</sup>-induced lattice distortion of the [SnBr<sub>6</sub>]<sup>4-</sup> octahedra strengthens electron-phonon interactions and elevates the STE binding energy, thereby stabilizing the excited states and suppressing nonradiative losses.

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Journal
Materials
Published
2025-11-26
DOI
https://doi.org/10.3390/ma18235324
Primary Topic
Perovskite Materials and Applications
Type
article
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article

Robust Self-Trapped Exciton Emission in Sb3+-Engineered Lead-Free Cs4SnBr6 Zero-Dimensional Perovskites

Rui Huang, Tianpei Qiu, Yi Zhang, Hongliang Li et al.
Materials
Perovskite Materials and Applications
article

Robust Self-Trapped Exciton Emission in Sb3+-Engineered Lead-Free Cs4SnBr6 Zero-Dimensional Perovskites

Rui Huang, Tianpei Qiu, Yi Zhang, Hongliang Li, Jie Song, Haixia Wu, Wendi Zhou, Zhenxu Lin
article en

Abstract

Zero-dimensional (0D) tin halide perovskites have emerged as promising luminescent materials owing to their broadband emission, high quantum yield, and negligible self-absorption. Yet, their luminescence efficiency and stability remain insufficient for practical optoelectronic applications. Here, Sb<sup>3+</sup> dopants are introduced into Cs<sub>4</sub>SnBr<sub>6</sub> through a water-assisted wet ball milling strategy, resulting in bright and thermally robust emission. The doped materials exhibit pronounced self-trapped exciton (STE) luminescence centered at 525 nm with a broad full width at half maximum of 110 nm, a large Stokes shift of approximately ~1.3 eV, and a photoluminescence lifetime of ~0.8 µs. Remarkably, Sb<sup>3+</sup> incorporation boosts the photoluminescence quantum yield (PLQY) up to 64% at room temperature while simultaneously improving thermal stability. Correlated spectroscopic analyses reveal that the Sb<sup>3+</sup>-induced lattice distortion of the [SnBr<sub>6</sub>]<sup>4-</sup> octahedra strengthens electron-phonon interactions and elevates the STE binding energy, thereby stabilizing the excited states and suppressing nonradiative losses.

MaterialsVol. 18(23)
Anshan Normal University (CN), Hanshan Normal University (CN)
Openalex Percentile: Top 63%
Perovskite Materials and Applications
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