Improved Optoelectronic Properties and Temporal Stability of AZO/Cu/AZO Films by Inserting an Ultrathin Al Layer

An ultrathin Al layer was introduced into AZO/Cu/AZO films to further enhance the optoelectronic performance. The AZO/Al/Cu/AZO films were deposited on glass substrates by DC and RF magnetron sputtering; the microstructure and optoelectronic properties were analyzed by XRD, SEM, AFM, TEM, visible spectrophotometer, and Hall effect measurement system. The results indicated that the Al layer played a crucial role in modulating the crystallization behavior and optoelectronic properties of the films, exhibiting a distinct thickness-threshold effect. At an Al layer thickness of 1 nm, the film exhibited optimal optoelectronic performance, achieving a high <i>F_OM</i> of 0.71 Ω^-1, a high transmittance of 85%, and a low resistivity of 5.7 × 10^-5 Ω·cm. However, when the Al layer thickness exceeded 1 nm, the crystallinity of the films deteriorated significantly, the grain boundary scattering and light absorption effect enhanced, leading to the deterioration of photoelectric properties. The introduction of the Al layer significantly improved the stability of the films, and the AZO/Al(2 nm)/Cu/AZO film exhibited the best temporal stability after being exposed to air for 20 months.