Sn Deposition on Bi <sub>2</sub> Se <sub>3</sub> : Interfacial Chemistry over Stanene Growth
Tin (Sn) thin films are deposited on BiSe substrate via vapor deposition under ultrahigh vacuum conditions, and the surface electronic structure and interface chemistry are systematically investigated using X‐ray and ultraviolet photoemission spectroscopy (XPS and UPS) measurements. Spectroscopy analysis reveals the formation of SnSe bonds along with a reduction of Bi, leading to the emergence of multiple Sn‐based interfacial phases such as SnSe and SnSe. Thus, our study estabilishes predominance of interfacial chemistry over epitaxial stanene growth on BiSe at room temperature, highlighting the challenges associated with the interface engineering in layered topological systems.
Authors
- Ziya S. Aliev (ORCID: https://orcid.org/0000-0001-5724-4637)
- Sanjoy Kr Mahatha (ORCID: https://orcid.org/0000-0002-5394-6911)
- Jyoti Sharma (ORCID: https://orcid.org/0000-0003-1743-713X)
Institutions
- Baku State University (AZ)
- Ministry of Science and Education Republic of Azerbaijan (AZ)
- UGC DAE Consortium for Scientific Research (IN)
Publication Details
- Journal
- physica status solidi (RRL) - Rapid Research Letters
- Published
- 2025-11-26
- DOI
- https://doi.org/10.1002/pssr.202500404
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00