An Extended Time-Mode Digital Pixel CMOS Image Sensor for IoT Applications

Time-mode digital pixel sensors have several advantages in Internet-of-Things applications, which require a compact circuit and low-power operation under poorly illuminated environments. Although the time-mode digitization technique can theoretically achieve a wide dynamic range by overcoming the supply voltage limitation, its practical dynamic range is limited by the maximum clock frequency and device leakage. This study proposes an extended time-mode digitization technique and a low-leakage pixel circuit to accommodate a wide range of light intensities with a small number of digital bits. The prototype sensor was fabricated in a 0.18 μm standard CMOS process, and the measurement results demonstrate its capability to accommodate a 0.03 lx minimum light intensity, providing a dynamic range figure-of-merit of 1.6 and a power figure-of-merit of 37 pJ/frame·pixel.

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Publication Details

Journal
Sensors
Published
2025-11-26
DOI
https://doi.org/10.3390/s25237228
Primary Topic
CCD and CMOS Imaging Sensors
Type
article
Field-Weighted Citation Impact
0.00

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article

An Extended Time-Mode Digital Pixel CMOS Image Sensor for IoT Applications

Taehyoung Kim, Gunhee Han
Sensors
CCD and CMOS Imaging Sensors
article

An Extended Time-Mode Digital Pixel CMOS Image Sensor for IoT Applications

Taehyoung Kim, Gunhee Han
article en

Abstract

Time-mode digital pixel sensors have several advantages in Internet-of-Things applications, which require a compact circuit and low-power operation under poorly illuminated environments. Although the time-mode digitization technique can theoretically achieve a wide dynamic range by overcoming the supply voltage limitation, its practical dynamic range is limited by the maximum clock frequency and device leakage. This study proposes an extended time-mode digitization technique and a low-leakage pixel circuit to accommodate a wide range of light intensities with a small number of digital bits. The prototype sensor was fabricated in a 0.18 μm standard CMOS process, and the measurement results demonstrate its capability to accommodate a 0.03 lx minimum light intensity, providing a dynamic range figure-of-merit of 1.6 and a power figure-of-merit of 37 pJ/frame·pixel.

SensorsVol. 25(23)
Yonsei University (KR)
Ministry of Trade, Industry and Energy, IC Design Education Center, Korea Semiconductor Research Consortium
Openalex Percentile: Top 64%
CCD and CMOS Imaging Sensors
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