Effect of sintering temperature on structural and optoelectronic properties of screen-printed V2O5 thick films

Vanadium pentoxide (V 2 O 5 ) films were synthesized on glass substrates employing the screen-printing technique at sintering temperatures of 500 °C and 600 °C. The structural properties of the V 2 O 5 films were scrutinized utilizing scanning electron microscopy (SEM), X-ray diffraction (XRD), and Fourier transform infrared spectroscopy (FTIR). The optical characteristics were assessed through UV– Vis spectroscopy and photoluminescence (PL) spectroscopy. XRD analysis revealed an increase in crystal size concomitant with the elevation of temperature. SEM investigations disclosed increased grain sizes and diminished particle agglomeration, with the emergence of voids in various regions as the sintering temperature escalated. FTIR examination demonstrated minor shifts and more pronounced peaks at elevated temperatures. Optical absorption assessments exhibited direct band gap semiconductor behavior, with band gap energies approximating 2.10 eV for films sintered at 500 °C and 1.95 eV for those subjected to 600 °C. PL spectroscopy indicated a red shift in band emission corresponding to the rise in sintering temperature. These observations imply that elevated sintering temperatures significantly enhance the crystallinity of V 2 O 5 films while concurrently reducing structural defects and improving crystalline quality. • V 2 O 5 films were synthesized on glass substrates via the screen-printing technique. • XRD analysis revealed an augmentation in crystal size with the elevation of temperature. • SEM investigations disclosed increased grain sizes. • PL spectroscopy indicated a red shift in band emission.