A stochastic dual-phase-lag two-temperature photo-thermoelastic model for double-porosity semiconductors with initial stress

This work presents a comprehensive stochastic thermoelastic model for analyzing photothermal wave propagation in double-porosity semiconductors subjected to initial stress within the framework of the dual-phase-lag (DPL) and two-temperature (TT) theories. Stochastic perturbations are introduced through Wiener process-based boundary noise, allowing the evaluation of both deterministic responses and their variance profiles using a convolution-based analytical formulation. The governing equations are solved in the Laplace-Fourier domain and inverted numerically to obtain the temperature, displacement, and stress fields. Representative results show that increasing porosity coefficients enhances wave attenuation and modifies coupling between mechanical and thermal responses, while higher phase-lag parameters delay temperature and stress propagation. The two-temperature coupling parameter significantly influences the magnitude and spread of thermal variance, demonstrating the sensitivity of stochastic wave behavior to microstructural and thermal relaxation effects. The variance amplitudes are shown to remain within realistic physical bounds for semiconductor materials, confirming the model's stability and practical relevance. These findings provide new insights into stochastic uncertainty propagation in semiconductors and guide experimental calibration and design optimization of MEMS and photo-thermoelastic devices operating under random thermal excitation.