Room-Temperature Electrical Readout of Spin Defects in van der Waals Materials

Negatively charged boron vacancy (V_{B}^{-}) in hexagonal boron nitride is the most extensively studied room-temperature quantum spin system in two-dimensional materials. Nevertheless, the current effective readout of V_{B}^{-} spin states is carried out by systematically optical methods. This limits their exploitation in compact and miniaturized quantum devices, which would otherwise hold substantial promise to address quantum sensing and quantum information tasks. In this Letter, we demonstrate a photoelectric spin readout technique for V_{B}^{-} spins in hexagonal boron nitride. The observed photocurrent signals stem from the spin-dependent ionization dynamics of boron vacancies, mediated by spin-dependent nonradiative transitions to a metastable state. We further extend this electrical detection technique to enable the readout of dynamical decoupling sequences, including the Carr-Purcell-Meiboom-Gill protocols, and of nuclear spins via electron-nuclear double resonance. These results provide a pathway toward on-chip integration and real-field exploitation of quantum functionalities based on two-dimensional material platforms.

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Publication Details

Journal
Physical Review Letters
Published
2025-11-10
DOI
https://doi.org/10.1103/dlzw-dhsr
Citations
1
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.52
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Room-Temperature Electrical Readout of Spin Defects in van der Waals Materials

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Room-Temperature Electrical Readout of Spin Defects in van der Waals Materials

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article en
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Abstract

Negatively charged boron vacancy (V_{B}^{-}) in hexagonal boron nitride is the most extensively studied room-temperature quantum spin system in two-dimensional materials. Nevertheless, the current effective readout of V_{B}^{-} spin states is carried out by systematically optical methods. This limits their exploitation in compact and miniaturized quantum devices, which would otherwise hold substantial promise to address quantum sensing and quantum information tasks. In this Letter, we demonstrate a photoelectric spin readout technique for V_{B}^{-} spins in hexagonal boron nitride. The observed photocurrent signals stem from the spin-dependent ionization dynamics of boron vacancies, mediated by spin-dependent nonradiative transitions to a metastable state. We further extend this electrical detection technique to enable the readout of dynamical decoupling sequences, including the Carr-Purcell-Meiboom-Gill protocols, and of nuclear spins via electron-nuclear double resonance. These results provide a pathway toward on-chip integration and real-field exploitation of quantum functionalities based on two-dimensional material platforms.

Physical Review LettersVol. 135(22)
Centre for Quantum Technologies (SG), University of Science and Technology of China (CN), National University of Singapore (SG), Nanyang Technological University (SG), Hefei National Center for Physical Sciences at Nanoscale (CN), Center for Integrated Quantum Science and Technology (DE), UMI MajuLab (SG), China Jiliang University (CN)
Openalex Percentile: Top 30%
Graphene research and applications
0.52
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