An all-printed flexible field effect transistor based on tellurene nanosheets with graphene electrodes
A full printing strategy was employed to prepare a flexible tellurene-based transistor with an Al 2 O 3 gate dielectric, enabling the application of artificial synapses through both electrical and optical stimuli.
Authors
- Liang Zhang (ORCID: https://orcid.org/0000-0002-2276-4787)
- Dongfang Shen (ORCID: https://orcid.org/0000-0002-9575-4942)
- Shangzhou Zhao
- Xikui Ma (ORCID: https://orcid.org/0000-0002-8965-3475)
- Yumeng Zhou
- Mingjia Zhang (ORCID: https://orcid.org/0009-0004-2014-1297)
Institutions
- Zhejiang Lab (CN)
- Ocean University of China (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-11-26
- DOI
- https://doi.org/10.1039/d5tc03429a
- Primary Topic
- Organic Electronics and Photovoltaics
- Type
- article
- Field-Weighted Citation Impact
- 0.00