Atomic layer deposition of Ru using a new zero-valent Ru precursor with a ligand system combining open and closed ligands
A newly designed zero-valent Ru precursor combining open and closed ligands enables atomic layer deposition of low-resistivity, highly conformal Ru thin films with exceptional thermal stability and growth performance.
Authors
- Ji‐Hoon Ahn (ORCID: https://orcid.org/0000-0001-6928-4038)
- Jinsik Kim (ORCID: https://orcid.org/0000-0002-9121-7031)
- Chang Mo Yoon
- Eun-Su Chung
- Yoon-A Park
- Min‐Ji Ha (ORCID: https://orcid.org/0000-0002-6554-0599)
- Na-Gyeong Kang
Institutions
- Pyeongtaek University (KR)
- Hanyang University (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-11-26
- DOI
- https://doi.org/10.1039/d5tc03685b
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00