Ferroelectric properties of 10 nm BaTiO <sub>3</sub> nanocubes synthesized by microwave synthesis procedure

Abstract We investigated the ferroelectric properties of 10 nm BaTiO 3 (BTO) nanocubes formed by dispersing them on the surface of an Nb‐doped SrTiO 3 (Nb:STO) substrate. The microwave synthesis procedure produced BTO nanocubes with a size of approximately 10 nm, and the BTO nanocubes were dispersed in ethanol before being spin coated on the surface of the Nb:STO substrate. From the piezoelectric d 33 hysteresis loops measured by a piezoresponse force microscope, it was confirmed that the 10 nm BTO nanocubes exhibited canonical ferroelectric properties. External voltages were applied to switch the polarization of the 10 nm BTO nanocubes, providing further evidence of their ferroelectric behavior. In particular, it was experimentally confirmed that the BTO nanocubes with a size of about 10 nm can be utilized as tunnel ferroelectric junction memory devices.

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Publication Details

Journal
Journal of the American Ceramic Society
Published
2025-11-24
DOI
https://doi.org/10.1111/jace.70400
Citations
1
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.52
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article

Ferroelectric properties of 10 nm BaTiO 3 nanocubes synthesized by microwave synthesis procedure

Eunmi Lee, Jong Yeog Son
1 citations
Journal of the American Ceramic Society
Ferroelectric and Piezoelectric Materials
0.52
article

Ferroelectric properties of 10 nm BaTiO 3 nanocubes synthesized by microwave synthesis procedure

Eunmi Lee, Jong Yeog Son
article en
1 citations

Abstract

Abstract We investigated the ferroelectric properties of 10 nm BaTiO 3 (BTO) nanocubes formed by dispersing them on the surface of an Nb‐doped SrTiO 3 (Nb:STO) substrate. The microwave synthesis procedure produced BTO nanocubes with a size of approximately 10 nm, and the BTO nanocubes were dispersed in ethanol before being spin coated on the surface of the Nb:STO substrate. From the piezoelectric d 33 hysteresis loops measured by a piezoresponse force microscope, it was confirmed that the 10 nm BTO nanocubes exhibited canonical ferroelectric properties. External voltages were applied to switch the polarization of the 10 nm BTO nanocubes, providing further evidence of their ferroelectric behavior. In particular, it was experimentally confirmed that the BTO nanocubes with a size of about 10 nm can be utilized as tunnel ferroelectric junction memory devices.

Journal of the American Ceramic SocietyVol. 109(1)
Korea University (KR), Kyung Hee University (KR), Institute of Natural Science (KP)
Openalex Percentile: Top 30%
Ferroelectric and Piezoelectric Materials
0.52
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